论文标题
SI底物和多孔SI底物上的混合III-V/SIGE太阳能电池
Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates
论文作者
论文摘要
已经开发了一个串联GAASP/SIGE太阳能电池，该电池是使用带有地下多孔层的硅底物上生长的组反向缓冲层的。反向缓冲层有助于减小螺纹脱位密度的厚度有限，但可以缓解裂纹的外观，如先前在常规SI基板上生长的设计中所观察到的那样。在这种新设计中，已将多孔硅层掺入靠近底物表面。该层的延展性有助于抑制裂纹的传播，减少了分流电阻低的问题，从而改善了太阳能电池性能。此新体系结构的第一个结果在这里介绍。
A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with limited thicknesses, but ease the appearance of cracks, as observed in previous designs grown on regular Si substrates. In this new design, a porous silicon layer has been incorporated close to the substrate surface. The ductility of this layer helps repress the propagation of cracks, diminishing the problems of low shunt resistance and thus improving solar cell performance. The first results of this new architecture are presented here.
