论文标题
机械转移的大面积Ga $ _2 $ o $ _3 $ passivates石墨烯并抑制界面声子散射
Mechanically transferred large-area Ga$_2$O$_3$ passivates graphene and suppresses interfacial phonon scattering
论文作者
论文摘要
我们通过在液体GA金属上合成的超大无定形GA $ _2 $ o $ _3 $的机械转移来证明石墨烯的大面积钝化层。对温度依赖性的电量测量的比较，对SIO $ _2 $ _2 $/SI的毫米量和裸石墨烯进行了比较，表明钝化的石墨烯维持其高场效应的高场效应迁移率。出乎意料的是，由于高delectric-constant ga $ _2 $ o $ _3 $的SIO $ _2 $筛选Sio $ _2 $的表面光学声子模式的相互作用，在低于220 K的一系列温度下，钝化的石墨烯的温度依赖性电阻率降低了。拉曼光谱和电气测量表明，ga $ _2 $ o $ _3 $钝化还可以保护石墨烯免受进一步的处理，例如al $ _2 $ o $ $ _3 $的等离子体增强原子层沉积。
We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga$_2$O$_3$ synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimetre-scale passivated and bare graphene on SiO$_2$/Si indicate that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO$_2$ by high-dielectric-constant Ga$_2$O$_3$, and the relatively high characteristic phonon frequencies of Ga$_2$O$_3$. Raman spectroscopy and electrical measurements indicate that Ga$_2$O$_3$ passivation also protects graphene from further processing such as plasma-enhanced atomic layer deposition of Al$_2$O$_3$.
