论文标题
碳化硅中的钒：具有较长松弛寿命和超精细分辨的光学转变的电信的自旋中心
Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions
论文作者
论文摘要
由于其在电信波长范围内的光学过渡，碳化硅（SIC）中的钒（SIC）正在成为量子技术的重要候选系统。但是，该缺陷家族的几个关键特征包括其自旋松弛寿命（T1），电荷状态动力学和水平结构尚不完全了解。在这项工作中，我们确定了钒缺陷集合的T1，表明在低温下它可以大大增强。我们观察到大型自旋对比度超过90％，长自旋 - - 递延时间在100MK时高达25s，在1.3k时1S的阶段为1s。这些测量值通过集合电荷状态动力学的表征来补充。稳定的电子自旋进一步可以通过两光子磁光光谱镜检查系统的超精细水平结构进行高分辨率表征。获得的见解指向基于SIC中的钒的高性能自旋界面。
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25s at 100mK, and of order 1s at 1.3K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems' hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC.
