论文标题
使用高电子亲和力无定形MOO3,与单层WSE2场效应晶体管的P型欧姆接触
P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
论文作者
论文摘要
1澳大利亚维多利亚州克莱顿市纳什大学物理与天文学学院2澳大利亚2澳大利亚研究委员会未来低能电子电子技术卓越中心(车队),莫纳什大学,克莱顿,维多利亚州,维多利亚州3800,澳大利亚3800,澳大利亚3澳大利亚3800 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South威尔士,2052年悉尼,澳大利亚9中心冷凝物质科学中心和原子倡议中心新材料,台湾国家大学,台北106号,台湾106,台湾10莫纳什原子薄材料中心,莫纳什大学,克莱顿,克莱顿,3800,澳大利亚,澳大利亚,澳大利亚,澳大利亚,
1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia