论文标题
在静电定义的2D半导体量子点中的单个激子捕获
Single exciton trapping in an electrostatically defined 2D semiconductor quantum dot
论文作者
论文摘要
2D半导体中的层间激子（IXS）具有很长的寿命和自旋 - 瓦利耦合物理学，其长期目标是用于valleytronic应用的单个激子诱捕。在这项工作中，我们使用纳米图案的石墨烯门来创建静电IX陷阱。我们测量了独特的功率依赖性IX能量的蓝移，其中狭窄的线宽发射表现出离散的能量跳跃。我们将这些跳跃归因于陷阱内IX的数量占用率的量化增加，并将其与理论模型进行比较，以将最低能量发射线分配给单个IX重组。
Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blue-shift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We attribute these jumps to quantized increases of the number occupancy of IXs within the trap and compare to a theoretical model to assign the lowest energy emission line to single IX recombination.
