论文标题
量化大量电导率作为当地的Chern标记
Quantised Bulk Conductivity as a Local Chern Marker
论文作者
论文摘要
Chern绝缘子的中心特性是拓扑阶段的稳健性和边缘状态对系统中的杂质的稳健性。尽管如此，在存在障碍的情况下，Chern数量不能直接计算出来。最近，已经完成了提出一个局部类似物的班级数字的工作，称为局部标记，可用于表征无序系统。但是，目前尚不清楚提出的标记是否代表了系统的物理测量特性。在这里，我们提出了从物理参数开始的局部标记，作为在系统的大部分中测得的局部交叉导率。我们找到了晶格上非相互作用系统的标记的明确形式，并表明它与Chern号的现有表达式相对应。为各种无序和无定形系统计算了示例，表明它精确地定量了Chern数量并对疾病进行了健壮。
A central property of Chern insulators is the robustness of the topological phase and edge states to impurities in the system. Despite this, Chern number cannot be straightforwardly calculated in the presence of disorder. Recently, work has been done to propose a local analog of the Chern number, called local markers, that can be used to characterise disordered systems. However, it was unclear whether the proposed markers represented a physically-measurable property of the system. Here we propose a local marker starting from a physical argument, as a local cross-conductivity measured in the bulk of the system. We find the explicit form of the marker for a non-interacting system of electrons on the lattice and show that it corresponds to existing expressions for the Chern number. Examples are calculated for a variety of disordered and amorphous systems, showing that it is precisely quantised to the Chern number and robust against disorder.
