论文标题

通过分层磁性半导体中的光学活性缺陷来感知局部磁环境

Sensing the local magnetic environment through optically active defects in a layered magnetic semiconductor

论文作者

Klein, Julian, Song, Zhigang, Pingault, Benjamin, Dirnberger, Florian, Chi, Hang, Curtis, Jonathan B., Dana, Rami, Bushati, Rezlind, Quan, Jiamin, Dekanovsky, Lukas, Sofer, Zdenek, Alù, Andrea, Menon, Vinod M., Moodera, Jagadeesh S., Lončar, Marko, Narang, Prineha, Ross, Frances M.

论文摘要

范德华(VDW)材料中的原子水平缺陷是量子技术和量子传感应用的必不可少的基础。除了在低温下,较丰富的磁相图(包括最近假设的缺陷诱导的磁序)外,由于直接间隙,分层磁性半导体CRSBR是探索光学缺陷的出色候选者。在这里,我们在CRSBR中显示了局部磁环境探针的光学活性缺陷。我们观察到CRSBR中频谱狭窄(1 MEV)的缺陷发射,这与散装磁序和额外的低温缺陷诱导的磁性均相关。我们在局部和非本地交换耦合效应的背景下阐明了该磁顺序的起源。我们的工作建立了像CRSBR这样的VDW磁铁作为与磁性晶格相关的光学研究缺陷的特殊平台。我们预计,受控的缺陷创造允许具有直接光学访问的独特成分量身定制的复杂磁纹理和相位。

Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects owing to a direct gap in addition to a rich magnetic phase diagram including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low temperature defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and non-local exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with the unique ingredient of direct optical access.

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