论文标题
pt/tiox/tooy/pt Memristors中的氧气空置动力学：与环境和内部电气交换
Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
论文作者
论文摘要
预计备忘录将成为开发新生物启发的纳米电子学的关键构件之一。过渡金属氧化物中的回忆作用通常与带电氧空位（OV）的纳米级的电迁移有关。在本文中，对于PT/Tiox/Taoy/PT设备，我们将在应用电应力时在设备和环境之间交换OV。从实验和理论模拟的组合中，我们确定Tiox和Taoy层在电动过程中都通过环境氧气摄取氧化。一旦稳定回忆效应（形成后行为），我们的结果表明，与环境的氧交换被抑制，并且驱动回忆行为的OV动力学仅限于Tiox和Taoy层之间的内部电气移动。我们的工作为设计可靠的二元氧化物回忆设备的设计提供了相关信息。
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiOx/TaOy/Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiOx and TaOy layers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiOx and TaOy layers. Our work provides relevant information for the design of reliable binary oxide memristive devices.
