论文标题
拓扑磁铁中磁过渡的电子特征的证据hosbte
Evidence for electronic signature of magnetic transition in topological magnet HoSbTe
论文作者
论文摘要
具有内在磁性顺序的拓扑绝缘子正在成为一个令人兴奋的平台，以实现物质拓扑量子状态的根本新的激发。为了研究这些系统及其物理，人们提出了各种磁性拓扑绝缘体系统，包括Hosbte，一种抗铁磁弱型弱拓扑绝缘子候选者。在这项工作中，我们使用扫描隧道显微镜来探测Hosbte的电子结构，并使用抗铁磁和铁磁阶，通过施加外部磁场来调整。尽管在费米能量周围，但我们发现在偏见区域内的铁磁和反铁磁序下的准粒子干扰之间的差异很小，新的准粒子干扰信号与铁磁性出现。该观察结果与我们的第一原理计算一致，表明该自旋轨道耦合拓扑磁体中电子状态的磁性驱动的过渡。
Topological insulators with intrinsic magnetic order are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. To study these systems and their physics, people have proposed a variety of magnetic topological insulator systems, including HoSbTe, an antiferromagnetic weak topological insulator candidate. In this work, we use scanning tunneling microscopy to probe the electronic structure of HoSbTe with antiferromagnetic and ferromagnetic orders that are tuned by applying an external magnetic field. Although around the Fermi energy, we find minor differences between the quasi-particle interferences under the ferromagnetic and antiferromagnetic orders, deep inside the valance region, a new quasi-particle interference signal emerges with ferromagnetism. This observation is consistent with our first-principles calculations indicating the magnetism-driven transition of the electronic states in this spin-orbit coupled topological magnet.
