论文标题
通过使用石墨烯纳米纤维边界来最大程度地降低相变内存的编程能力
Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact
论文作者
论文摘要
在大数据时代，非易失性相变的随机访问记忆（PCRAM）被认为是新兴质量存储的有前途的候选者之一。但是，相对较高的编程能源会影响PCRAM中功耗的进一步降低。利用石墨烯的狭窄边缘接触可以有效地减少每个单元中的相位变化材料的活跃体积，从而实现低功率操作。在这里，我们证明，在〜3 nm宽的石墨烯纳米替宾（GNR）的细胞中，写入能量可以降低到约53.7 fj，作为边缘接触，其横截面面积仅为〜1 nm2。发现循环耐力表现出明显的依赖性对细胞中的偏极性，其结构不对称。如果将正偏置应用于石墨烯电极，则耐力至少可以比逆转极性的情况更长。这项工作代表了低功率PCRAM的巨大技术进步，将来可能会受益于内存计算。
Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge-contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low-power operation. Here, we demonstrate that a write energy can be reduced to about ~53.7 fJ in a cell with ~3 nm-wide graphene nanoribbon (GNR) as edge-contact, whose cross-sectional area is only ~1 nm2. It is found that the cycle endurance exhibits an obvious dependence on the bias polarity in the cell with structure asymmetry. If a positive bias was applied to graphene electrode, the endurance can be extended at least one order longer than the case with reversal of polarity. The work represents a great technological advance for the low power PCRAM and could benefit for in-memory computing in future.
