论文标题
异质结构的高光致发光强度通过均匀载体分布来主导的DUV
High Photoluminescence Intensity of Heterostructure AlGaN-based DUV-LED through Uniform Carrier Distribution
论文作者
论文摘要
我们报告了基于基于氮化剂（AlgA）的铝（AlGAN）基于铝（AlGAN）的深粉状二极管发光二极管（DUV-LED）及其对载体浓度，辐射重新组合和光致发光（PL）的影响的铝（AL）组成变化的数值分析。比较和分析了三种具有不同成分的不同结构。由于载流子分布的不平衡，DUV领导的辐射重组效率较低。研究结果表明，均匀的电子和孔分布可以显着改善用薄的阶梯形量子井（QW）来改善结构的辐射重组。模拟结构发出的波长为302.874 nm，分为紫外线B（UV-B）频谱。我们的结果表明，需要QW中的载体均匀性来增强DUV LED的光强度。值得注意的是，均匀性会大大增强PL强度，至少比其他结构高300％。
We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and photoluminescence (PL). Three different structures with different Al compositions are compared and analyzed. The radiative recombination of the DUV-LED is less efficient due to the imbalance of carrier distribution. The findings show that the uniform electrons and holes distribution significantly improve the radiative recombination for structure with a thin step-shaped quantum well (QW). The simulated structure emits a wavelength of 302.874 nm, categorized in the ultraviolet-B (UV-B) spectrum. Our results imply that carrier uniformity in QW is required to enhance the light intensity of DUV-LED. Remarkably, the uniformity enhances the PL intensity drastically, at least 300% higher than the other structures.
