论文标题
压力诱导的2D石墨烯中的3D应变
Pressure induced 3D strain in 2D Graphene
论文作者
论文摘要
二维（2D）材料（例如石墨烯）为广泛的应用提供了各种出色的特性。他们的运输特性尤其呈现出丰富的研究领域。但是，在压力下对石墨烯的运输特性的研究主要限于$ \ sim $ 1 GPA，这在很大程度上是由于将石墨烯放入钻石砧元中的技术挑战和困难，并在压力下保持良好的电气接触。我们开发了一种新型技术，可直接测量高质量化学蒸气沉积（CVD）单层石墨烯的运输特性。在纯单层石墨烯上，高达40 GPA的纯拉曼光谱和直接电阻率测量的结合表明，$ c_ {33} $ = 0.26 $ = 0.26 $ \ pm _ {。09}^{。1111} $ gpa的平面刚度有效，并在绘制范围内观察到相对恒定的压力，并在绘图中观察到相对恒定的电阻，并在绘制范围内进行了较大的压力。
Two-dimensional (2D) materials such as graphene offer a variety of outstanding properties for a wide range of applications. Their transport properties in particular present a rich field of study. However, the studies of transport properties of graphene under pressure are mostly limited to $\sim$1 GPa, largely due to the technical challenges and difficulties of placing graphene inside a diamond anvil cell (DAC) and maintaining good electrical contacts under pressure. We developed a novel technique allowing for direct measurements of the transport properties of high quality chemical vapor deposition (CVD) monolayer graphene under pressures. Combined Raman spectroscopic and direct resistivity measurements on pure monolayer graphene up to 40 GPa shows an effective out of plane stiffness of $c_{33}$=0.26$\pm_{.09}^{.11}$ GPa, and observe relatively constant resistances with pressure, suggesting high pressure as a useful technique for producing large biaxial strains within graphene.
