论文标题
磁异质结构中超快载体动力学的范德华工程
Van der Waals engineering of ultrafast carrier dynamics in magnetic heterostructures
论文作者
论文摘要
由固有磁性拓扑绝缘子MNBI $ _2 $ te $ _4 $及其非磁性对应物bi $ _2 $ _2 $ _3 $ host主机不同的表面电子带结构组成的异质结构$ _2 $ _2 $ _4 $及其非磁性对应物bi $ _2 $ _2 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _4 $ _4 $ _4 $ _4 $ $ _4 $。在这里,我们探究了Mnbi $ _2 $ _4 $和MNBI $ _4 $ _4 $ te $ _7 $的超快动态响应,此后使用时间和角度分辨的光发射光谱镜检查,以及基于散装动力学的近红外光学激发,基于表面量化量的散装理论的散装动力学。我们可以访问Mnbi $ _2 $ _2 $ _4 $和BI $ _4 $和BI $ _2 $ _2 $ _3 $的表面终止Mnbi $ _4 $ _4 $ _4 $ _7 $的表面终止,揭示了与BI $ _2 $ _2 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 mnbi $ _2 $ te $ _4 $ layers,激光通知可延迟最多350 fs。随后的热放松过程是由磁子散射驱动的,在磁性mnbi $ _2 $ _4 $ _4 $ septuple层中,放松时间明显较慢。观察到的层间电荷转移与内部声子散射之间的竞争展示了一种控制MNBI $ _2 $ TE $ _4 $ _4 $的Van der Waals化合物中超快电荷转移过程的方法。
Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface electronic band structures depending on the stacking order and exposed termination. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy, and disentangle surface from bulk dynamics based on density functional theory slab calculations of the surface-projected electronic structure. We gain access to the out-of-equilibrium charge carrier populations of both MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ surface terminations of MnBi$_4$Te$_7$, revealing an instantaneous occupation of states associated with the Bi$_2$Te$_3$ surface layer followed by carrier extraction into the adjacent MnBi$_2$Te$_4$ layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by phonon scattering with significantly slower relaxation times in the magnetic MnBi$_2$Te$_4$ septuple layers. The observed competition between interlayer charge transfer and intralayer phonon scattering demonstrates a method to control ultrafast charge transfer processes in MnBi$_2$Te$_4$-based van der Waals compounds.