论文标题
Al/sio $ _2 $/si连接的广泛有效的工作功能调整，用al/sio $ _2 $接口实现的石墨烯互连接器
Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface
论文作者
论文摘要
金属电极的有效工作功能是确定金属/氧化物/半导体连接的阈值电压的主要因素之一。在这项工作中，我们在实验上证明了Al/sio $ _2 $/N-SI交界处的铝（Al）电极的有效工作功能大大增加了$ \ sim $ 1.04 eV，插入Al/sio $ _2 $接口的石墨烯层中层。当将平流电压应用于连接处时，我们还提供了求解泊松方程的设备 - 物理分析，这支持了Al有效工作功能的广泛调整源自Al和石墨烯层之间的电子轨道的重叠形成的电偶极层。我们的工作表明，仅将Al电极与面积特异性的基础石墨烯层间构造双金属栅极CMOS电路的可行性。
The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO$_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO$_2$ interface. We also provide the device-physical analysis of solving Poisson equation when the flat-band voltage is applied to the junction, supporting that the wide tuning of Al effective work-function originates from the electrical dipole layer formed by the overlap of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer.
