论文标题
辐射的二维拓扑绝缘子的浮子状态和光导率
Floquet states and optical conductivity of an irradiated two dimensional topological insulator
论文作者
论文摘要
我们研究了使用扩展的Kubo形式主义的晶状体绝缘子的晶格模型的浮雕状态的拓扑以及晶格模型的时间平均电导率。考虑了两个驾驶制度，即抗谐振和持有呼声，以及两种用于占领浮雕国家的模型，即理想和卑鄙的能源占领。在理想的职业中，DC光学厅电导率的实际部分被证明是在未对平均能量分布进行量化的情况下进行量化的。 Floquet带结构中的光学跃迁在很大程度上取决于占用，也影响了光电重量，从而影响光导率的所有组件。在高频制度下，我们提出了有效哈密顿量及其相图的分析计算，该计算取决于两个表面之间的隧道能量。当系统的拓扑被弱的抗呼吸驱动器所照射时，该系统的拓扑表现出丰富的相位。
We study the topology of the Floquet states and time-averaged optical conductivity of the lattice model of a thin topological insulator subject to a circularly polarized light using the extended Kubo formalism. Two driving regimes, the off-resonant and on-resonant, and two models for the occupation of the Floquet states, the ideal and mean-energy occupation, are considered. In the ideal occupation, the real part of DC optical Hall conductivity is shown to be quantized while it is not quantized for the mean energy distribution. The optical transitions in the Floquet band structure depend strongly on the occupation and also the optical weight which consequently affect all components of optical conductivity. At high frequency regime, we present an analytical calculation of the effective Hamiltonian and also its phase diagram which depends on the tunneling energy between two surfaces. The topology of the system shows rich phases when it is irradiated by a weak on-resonant drive giving rise to emergence of anomalous edge states.
