论文标题
硅纳米线中载体动力学的超快光学纳米镜检查
Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires
论文作者
论文摘要
半导体材料中的载体分布和动态通常控制其物理特性，这些特性对工业应用中的功能和性能至关重要。电子和光子设备的持续微型化需要在皮秒级和纳米长度尺度同时探测半导体中的载体行为。在这里，我们报告了可见的北红外光谱区域中的泵探针光学纳米镜检查，以表征硅纳米结构中的载体动力学。通过与点偶极模型的耦合实验，我们可以在单个硅纳米线中解决依赖大小的光激发载体寿命。我们进一步证明了具有低于50 nm空间分辨率的硅纳米结构中的局部载体衰减时间映射。我们的研究实现了超快载体动力学的纳米影像学，该动力学将在未来的广泛电子，光子和光电设备的未来设计中找到有希望的应用。
Carrier distribution and dynamics in semiconductor materials often govern their physical properties that are critical to functionalities and performance in industrial applications. The continued miniaturization of electronic and photonic devices calls for tools to probe carrier behavior in semiconductors simultaneously at the picosecond time and nanometer length scales. Here, we report pump-probe optical nanoscopy in the visible-near-infrared spectral region to characterize the carrier dynamics in silicon nanostructures. By coupling experiments with the point-dipole model, we resolve the size-dependent photoexcited carrier lifetime in individual silicon nanowires. We further demonstrate local carrier decay time mapping in silicon nanostructures with a sub-50 nm spatial resolution. Our study enables the nanoimaging of ultrafast carrier kinetics, which will find promising applications in the future design of a broad range of electronic, photonic, and optoelectronic devices.
