论文标题
Batio中的铁电和电阻转换$ _3 $薄膜，带有液体电解质顶部接触生物电子设备
Ferroelectricity and resistive switching in BaTiO$_3$ thin films with liquid electrolyte top contact for bioelectronic devices
论文作者
论文摘要
我们在18 nm厚的外延batio $ _3 $（bto）膜中研究了铁电和电阻性开关行为，以电解质 - 弗洛电 - 纤维导向器（EFS）配置中的膜中的膜。该系统的潜力是在生物电子中作为铁电微电极的潜力。 BTO膜是通过脉冲激光沉积（PLD）在半导体的NB掺杂（0.5 wt \％）srtio $ _ {3} $（NB：STO）单晶底物上生长的。裸BTO膜的铁电特性通过压电响应力显微镜（PFM）测量证明。 EFS构型中的环状伏安法（CV）测量值，磷酸盐缓冲盐水（PBS）充当液体电解质顶接触，表明双极电流电压环中的特征性铁电开关峰。通过分析EFS设备对单极电压信号的当前响应，可以证实观察到的开关峰的铁电性质。此外，电化学阻抗光谱（EIS）测量表明EFS设备的双极性切换行为，该行为由BTO层的Remanent极化状态控制。我们的结果代表了基于铁电微电极的神经假体植入物和杂交神经计算系统的构成步骤。
We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a ferroelectric microelectrode in bioelectronics. The BTO films are grown by pulsed laser deposition (PLD) on semiconducting Nb-doped (0.5 wt\%) SrTiO$_{3}$ (Nb:STO) single crystal substrates. The ferroelectric properties of the bare BTO films are demonstrated by piezoresponse force microscopy (PFM) measurements. Cyclic voltammetry (CV) measurements in EFS configuration, with phosphate buffered saline (PBS) acting as the liquid electrolyte top contact, indicate characteristic ferroelectric switching peaks in the bipolar current-voltage loop. The ferroelectric nature of the observed switching peaks is confirmed by analyzing the current response of the EFS devices to unipolar voltage signals. Moreover, electrochemical impedance spectroscopy (EIS) measurements indicate bipolar resisitive switching behavior of the EFS devices, which is controlled by the remanent polarization state of the BTO layer. Our results represent a constitutive step towards the realization of neuroprosthetic implants and hybrid neurocomputational systems based on ferroelectric microelectrodes.
