论文标题

分层磷化物EUCD $ _ \ MATHBF {2} $ P $ _ \ MATHBF {2} $中的光学属性和载体定位

Optical properties and carrier localization in the layered phosphide EuCd$_\mathbf{2}$P$_\mathbf{2}$

论文作者

Homes, C. C., Wang, Z. -C., Fruhling, K., Tafti, F.

论文摘要

分层磷化物材料EUCD $ _2 $ p $ _2 $的复杂光学性能的温度依赖性在$ t _ {\ rm n} \ simeq 11.5 $ k以下的宽频率范围内进行了测量,用于在$ a-b $ planes中的光。在室温下,光电率较弱的自由载体组件很好地描述了$ \ simeq 1100 $ cm $ cm $^{ - 1} $,散布速度为$ 1/τ_d\ simeq 700 $ cm $^{ - 1} $,带有band band band basborptions $ $ \ simeq $ \ simeq 2000 cm $ cm $^{ - 1} $。在$ \ simeq \,$ 89和239 cm $^{ - 1} $上观察到两个红外活动$ e_u $模式。随着温度的降低,散射速率降低,低频电导率略有增加。但是,低于$ \ simeq 50 $ k电导率降低,直到最大电阻率在$ \ simeq 18 $ k(低于$ 2T _ {\ rm n} $低于$ 2T _ {\ rm n} $)。 $ t _ {\ rm n} $以下,金属行为被恢复。有趣的是,$ e_u $模式在很大程度上不受这些变化的影响,只有高频模式的位置显示出异常行为的任何迹象。虽然考虑了几种情况,但主要的视图是,最大电阻率和随后的载体定位是由于$ \ simeq 2t _ {\ rm n} $低于$ \ simeq 2t _ {\ rm n} $的形成导致自旋旋转簇由于旋转式载体量导致的旋转式簇[1]。

The temperature dependence of the complex optical properties of the layered phosphide material EuCd$_2$P$_2$ have been measured over a wide frequency range above and below $T_{\rm N} \simeq 11.5$ K for light polarized in the $a-b$ planes. At room temperature, the optical conductivity is well described by a weak free-carrier component with a Drude plasma frequency of $\simeq 1100$ cm$^{-1}$ and a scattering rate of $1/τ_D\simeq 700$ cm$^{-1}$, with the onset of interband absorptions above $\simeq 2000$ cm$^{-1}$. Two infrared-active $E_u$ modes are observed at $\simeq\,$89 and 239 cm$^{-1}$. As the temperature is reduced the scattering rate decreases and the low-frequency conductivity increases slightly; however, below $\simeq 50$ K the conductivity decreases until at the resistivity maximum at $\simeq 18$ K (just below $2T_{\rm N}$) the spectral weight associated with free carriers is transferred to a localized excitation at $\simeq 500$ cm$^{-1}$. Below $T_{\rm N}$, metallic behavior is recovered. Interestingly, the $E_u$ modes are largely unaffected by these changes, with only the position of the high-frequency mode showing any signs of anomalous behavior. While several scenarios are considered, the prevailing view is that the resistivity maximum and subsequent carrier localization is due to the formation of ferromagnetic domains below $\simeq 2T_{\rm N}$ that result in spin-polarized clusters due to spin-carrier coupling [1].

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