论文标题
通过原子吸附在山谷锁的单层中的山谷和旋转分裂
Valley and spin splittings in a valley-layer-locked monolayer via atomic adsorption
论文作者
论文摘要
迄今为止，已经发现了许多山谷材料，并使用了旋转谷或山谷层耦合。非常需要意识到山谷材料中更电子程度的相互作用。根据第一原理的计算，我们在Tisico单层的带结构中演示了山谷和自旋退化升起，并在原子吸附的层伪蛋白层的选择性表达的帮助下。过渡金属的引入提供了有效的电场和磁接近效应，从而产生了山谷和自旋分裂。可以通过施加外部电场来进一步调节这些分裂。根据改进的频带结构，在适当频率的光场下选择性地创建了具有不同旋转和电偶极组合的各种层间激子。原子吸附的Tisico单层中的可调节旋转和山谷分裂为探索旋转，山谷和伪伪人物之间的相互作用提供了机会，并设计了先进的光电设备。
To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the first-principles calculations, we demonstrate the valley and spin degeneracy liftings in the band structure of a TiSiCO monolayer, with the help of the selective expression of the layer pseudospin via atomic adsorption. The introduction of the transition-metal adatoms provides an effective electric field and magnetic proximity effect, giving rise to the valley and spin splittings. These splittings can be further tuned by applying an external electric field. According to the modified band structure, various interlayer excitons with different combinations of spins and electric dipoles are selectively created, under the optical field of appropriate frequencies. The tunable spin and valley splittings in atom adsorbed TiSiCO monolayer offer opportunities for exploring the interactions between spin, valley and layer pseudospin, and designing advanced optoelectronic devices.
