论文标题
单像素的单微孔，用于薄的Ge-On-Si图像传感器，具有增强的灵敏度至1700 nm
Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm
论文作者
论文摘要
我们提供了一个GE-ON_SI CMOS图像传感器，具有近红外电磁波的背面照明，波长范围为300-1700nm，对于光传感器技术必不可少的检测。微孔有助于提高光学效率并将范围扩展到1.7微米波长。我们证明了对近红外吸收的纳米孔的宽度和深度的优化。我们通过在像素之间使用薄薄的Si氧化物深沟式隔离来显示串扰的降低。最后，通过引入孔，我们显示了设备电容的26-50％。这种CMOS兼容的GE-ON_SI传感器将实现高密度，超快速和有效的近红外成像。
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical efficiency and extend the range to the 1.7 microns wavelength. We demonstrate an optimization for the width and depth of the nano-holes for maximal absorption in the near infrared. We show a reduction in cross-talk by employing thin Si oxide deep trench isolation in between the pixels. Finally, we show a 26-50 percent reduction in the device capacitance with the introduction of a hole. Such CMOS-compatible Ge-on_Si sensor will enable high-density, ultra-fast and efficient near-infrared imaging.
