论文标题
横向单层异质结构中山谷Qubit和Valley几何相的电气操纵
Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures
论文作者
论文摘要
我们探索了一个固定的固态固定量，该固态量子位于一个限制在栅极定义的量子点中的电子的山谷中，该量子点在单层MOS $ _2 $ _2 $/ws $ _2 $ _2 $横向连接处产生，在那里出现了陡峭的偶极电势。我们表明，沿着扶手椅方向定向的连接可以诱导限制在相邻量子点中的电子间隔跃迁，而（可控制的）与连接处的重叠是显着的，并且泵送频率调节。引起过渡的泵送方案是全电动的：通过将振荡电压应用于控制门，从而获得可扩展的量子架构。我们还报告了通过积累非亚伯山谷浆果阶段来进行山谷Qubit操纵的另一种可能性。为了建模纳米维克，我们以紧密结合的方法求解时间依赖性的schrödinger-poisson方程，并获得山谷 - Qubit System的精确时间进化。
We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: obtained by applying oscillating voltages to control gates and thus enables for scalable qubit architectures. We also report another possibility of valley-qubit manipulation by accumulating non-Abelian valley Berry phase. To model nanodevice we solve the time-dependent Schrödinger-Poisson equations in a tight-binding approach and obtain exact time-evolution of the valley-qubit system.
