论文标题
具有铁电薄膜和二维过渡金属二核苷的异质结构中局部激子的单电荷控制
Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides
论文作者
论文摘要
二维过渡金属二甲构基(TMDC)中局部激子(LX)的单电荷控制对于潜在的量子信息处理和存储中的潜在应用至关重要。但是,将金属门应用于TMDC的传统静电掺杂方法可能会导致不均匀的电荷分布,光淬灭和能量损失。在这里,通过局部控制铁电薄膜BifeO3(BFO)的铁电偏振,我们可以通过确定性地操纵单层WSE2的掺杂类型,以实现P型和N型掺杂。这种非易失性方法可以维持掺杂类型,并长时间保持局部激发电荷,而无需施加电压。我们的工作表明,BFO的铁电极化可以有效控制LX的电荷。通过磁光学测量证实,已经在不同的铁电偏振区域中观察到中性和带电的LX。在高磁场中,已经实现了这些量子发射器的高度圆极化度。以非挥发性方式控制LX的单电荷显示出具有光子长期记忆所需电荷状态的确定性光子发射的巨大潜力。
Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method with applying metallic gates onto TMDCs may cause the inhomogeneous charge distribution, optical quench, and energy loss. Here, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO3 (BFO) with a scanning probe, we can deterministically manipulate the doping type of monolayer WSe2 to achieve the p-type and n-type doping. This nonvolatile approach can maintain the doping type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree about 90 % of the photon emission from these quantum emitters have been achieved in high magnetic fields. Controlling single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory.