论文标题
铁电场效应晶体管中的存储窗口：分析方法
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach
论文作者
论文摘要
铁电场效应晶体管（FEFET）的存储窗口定义为高状态和低状态阈值电压的分离，是FEFET存储器特性的重要度量。在这项研究中，我们从理论上研究了铁电栅极绝缘体的FeFet存储器窗口与P-E磁滞回路之间的关系，并得出了由材料参数明确描述的紧凑模型。发现记忆窗口与小极化状态的铁电偏振成正比成正比，并且当remanent极化比Permanent X倍数大得多时，收敛到2 x强化场X厚度的极限值。我们讨论可能影响实际设备中的存储窗口的其他因素，例如中间层的存在（无直接影响），界面电荷（铁电和电荷捕获滞后滞后之间线性叠加的无效）以及次要环路操作（行为等于发电界面电荷的产生）。
A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically investigate the relation between the FeFET memory window and the P-E hysteresis loop of the ferroelectric gate insulator, and derive a compact model explicitly described by material parameters. It is found that the memory window is linearly proportional to the ferroelectric polarization for the small polarization regime, and converges to the limit value of 2 x coercive field x thickness when the remanent polarization is much larger than permittivity x coercive field. We discuss additional factors that possibly influence the memory window in actual devices such as the existence of interlayer (no direct impact), interface charges (invalidity of linear superposition between the ferroelectric and charge-trapping hysteresis), and minor-loop operation (behavior equivalent to the generation of interface charges).
