论文标题
较弱的磁通量和旋转轨道疾病的扁平带诱导金属绝缘体过渡
Flat Band Induced Metal-Insulator Transitions for Weak Magnetic Flux and Spin-Orbit Disorder
论文作者
论文摘要
我们考虑通过歧管角参数θ进行参数的尺寸d = 1、2中的可调全频扁平（ABF）晶格的歧管。我们研究了在弱磁通量障碍和弱旋转轨道障碍存在下本征态的定位特性。我们证明，弱小的ABF晶格是通过有效的无尺度模型来描述的，在该模型中，该障碍强度被缩放了。对于弱磁通量障碍，我们观察到在d = 1中的平板能量下的亚指数定位，这与通常的安德森定位不同。我们还发现，d = 2中弱通量值的平板能量在平板能的分歧位置长度，但是这些能量在这些能量下的特征的特征尚不清楚。对于d = 2中的弱自旋轨道耦合障碍，我们确定具有迁移率边缘的可调金属 - 绝缘子过渡。我们还考虑了混合旋转轨道和对角线障碍的情况，并获得了由歧管参数θ驱动的金属 - 绝缘体过渡。
We consider manifolds of tunable all-band flat (ABF) lattices in dimensions d = 1, 2, parametrized by a manifold angle parameter θ. We study localization properties of eigenstates in the presence of weak magnetic flux disorder and weak spin-orbit disorder. We demonstrate that weakly disordered ABF lattices are described by effective scale-free models where the disorder strength is scaled out. For weak magnetic flux disorder we observe sub-exponential localization at flatband energies in d = 1, which differs from the usual Anderson localization. We also find diverging localisation length at flatband energies for weak flux values in d = 2, however the character of the eigenstates at these energies is less clear. For weak spin-orbit coupling disorder in d = 2 we identify a tunable metal-insulator transition with mobility edges. We also consider the case of mixed spin-orbit and diagonal disorder and obtain the metal-insulator transition driven by the manifold parameter θ.
