论文标题
使用MA2Z4单层系列的狭窄带宽材料设计电力效率晶体管
Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series
论文作者
论文摘要
晶体管中的子阈值泄漏电流已成为实现超低功率晶体管的关键限制因素。泄漏电流主要由电荷载体的长尾尾决定。我们通过使用狭窄的带宽半导体来通过过滤高能载体来限制热泄漏电流，从而限制了该问题的解决方案。我们在横向晶体管中特异性证明了这种溶液，其侧向单层MOSI2N4具有不同的钝化作为通道材料。值得注意的是，我们发现，即使对于具有5 nm栅极长度的设备，提议的窄带宽设备也可以实现较大的开/关比，甚至具有0.1V的超低电源电压。我们还表明，其他几种材料在同一系列中具有狭窄带宽传导和价带的独特电子性能。
The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a solution to this problem by using narrow bandwidth semiconductors for limiting the thermionic leakage current by filtering out the high energy carriers. We specifically demonstrate this solution in transistors with laterally confined monolayer MoSi2N4 with different passivation serving as channel material. Remarkably, we find that the proposed narrow bandwidth devices can achieve a large ON/OFF current ratio with an ultra-low-power supply voltage of 0.1 V, even for devices with a 5 nm gate length. We also show that several other materials share the unique electronic properties of narrow bandwidth conduction and valance bands in the same series.
