论文标题
拓扑场效应晶体管具有量化/关闭电导的螺旋/手性错位状态
Topological field-effect transistor with quantized ON/OFF conductance of helical/chiral dislocation states
论文作者
论文摘要
拓扑是推动量子设备出现的关键要素。提出了拓扑场效应晶体管（TFET），通过用拓扑保护的量化电导率代替ON状态，以胜过常规FET，而OFF状态仍然具有相同的正常绝缘特性，因此具有相似的缺点。在这里，我们通过在三维拓扑绝缘子中切换在螺旋和手性拓扑螺钉脱位（SD）状态之间，展示了具有打开和量化电导的概念验证TFET。一对SD配置为一个用作通道，另一个由局部磁场控制的门配置。如紧密结合量子运输计算所示，通过$ 2E^2/h $和$ e^2/h $的开关电导率分别实现了可逆的现场转换。此外，基于第一原理计算，Babio $ _3 $作为具有所需拓扑SD状态的候选材料。我们的发现为高保真拓扑量子设备开辟了新的途径。
Topology is a key ingredient driving the emergence of quantum devices. Topological field-effect transistor (TFET) has been proposed to outperform the conventional FET by replacing the ON state with topology-protected quantized conductance, while the OFF state remains the same normal insulating characteristics and hence bears similar drawbacks. Here, we demonstrate a proof-of-concept TFET having both ON and OFF quantized conductance, by switching between helical and chiral topological screw dislocation (SD) states in three-dimensional topological insulators. A pair of SDs are configured with one acting as channel and the other as gate controlled by local magnetic field. A reversible field-switching is achieved with the ON and OFF conductance of $2e^2/h$ and $e^2/h$, respectively, as shown by tight-binding quantum transport calculations. Furthermore, BaBiO$_3$ is shown as a candidate material having the desired topological SD states, based on first-principles calculations. Our findings open a new route to high-fidelity topological quantum devices.
