论文标题
石墨烯晶体管的大规模集成在线后端的潜在应用
Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line
论文作者
论文摘要
已经建立了一个芯片到晶圆量表，CMOS兼容的石墨烯设备制造方法可以集成到常规半导体过程流动的线（Beol）的后端（Beol）。在本文中，我们提出了使用此晶圆可扩展方法制造的石墨烯场效应晶体管（GFET）的实验结果。这些晶体管中的载体移动性可达几百cm $^2 $ v $^{ - 1} $ s $^{ - 1} $。此外，这些设备表现出类似于使用机械去角质制造的石墨烯设备的当前饱和区域。 GFET的总体性能尚无法与基于机械剥落材料的设备报告的记录值竞争。然而，这种大规模的方法是迈向可靠性和可变性研究的重要一步，以及对设备方面的优化，例如电气接触和具有统计相关数量的设备数量的介电接口。它也是将石墨烯引入晶圆量表工艺线的重要里程碑。
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present experimental results of graphene field effect transistors (GFETs) which were fabricated using this wafer scalable method. The carrier mobilities in these transistors reach up to several hundred cm$^2$V$^{-1}$s$^{-1}$. Further, these devices exhibit current saturation regions similar to graphene devices fabricated using mechanical exfoliation. The overall performance of the GFETs can not yet compete with record values reported for devices based on mechanically exfoliated material. Nevertheless, this large scale approach is an important step towards reliability and variability studies as well as optimization of device aspects such as electrical contacts and dielectric interfaces with statistically relevant numbers of devices. It is also an important milestone towards introducing graphene into wafer scale process lines.
